| 掲載年度 |
2016 |
| 種類 |
国外
|
| 学会名 |
26th International Photovoltaic Science and Engineering Conference and Exhibition (PVSEC-26) |
| 発表題目 |
The influence of substrate orientation on strain relaxation mechanisms of InGaAs layer grown on vicinal GaAs substrates measured by in situ X-ray diffraction |
| 発表者 |
Hidetoshi Suzuki（宮崎大学）
Takuo Sasaki（量子科学技術研究開発機構）
Masamitu Takahasi（量子科学技術研究開発機構）
Itaru Kamiya
Yoshio Ohshita
Nobuaki Kojima
Atsuhiko Fukuyama（宮崎大学）
Tetsuo Ikari（宮崎大学）
Masafumi Yamaguchi
|
| 主催団体 |
|
| 発表場所 |
Marina Bay Sands Expo and Convention Centre (MBS) |
| 発表日 |
2016/10/26
|
| 講演内容 |
InGaAs layers on vicinal GaAs substrates have been grown by MBE. The processes have been studied in situ using X-ray diffraction at SPring-8. The influence and the mechanisms of the influence of miscut is discussed. |
