| 掲載年度 |
2016 |
| 種類 |
国外
|
| 学会名 |
32nd North American Molecular Beam Epitaxy Conference (NAMBE 2016) |
| 発表題目 |
Simulation of RHEED Intensity Transients during MBE Growth of InAs Quantum Dots on GaAs(001) |
| 発表者 |
Kenichi Shimomura（量子界面物性）
Itaru Kamiya
|
| 主催団体 |
American Vacuum Society |
| 発表場所 |
Gideon Putnam Hotel, Saratoga Springs, NY, U.S.A. |
| 発表日 |
2016/09/19
|
| 講演内容 |
The RHEED intensity transients during MBE growth of InAs quantum dots on GaAs(001) has been simulated. The results agree with our former observations, and hence provides insights into the possible mechanisms of dot formation processes. |
