| 掲載年度 |
2016 |
| 種類 |
国内
|
| 学会名 |
The 43rd International Symposium on Compound Semiconductors (ISCS) |
| 発表題目 |
Realization of Conductive AlN Epitaxial Layer on Si Substrate using Spontaneously Formed Nano-Size Via-Holes for Vertical AlGaN High Power FET |
| 発表者 |
Noriko Kurose（立命館大学）
Kota Ozeki（立命館大学）
Tsutomu Araki（立命館大学）
Itaru Kamiya
Naotaka Iwata
Yoshinobu Aoyagi（立命館大学）
|
| 主催団体 |
|
| 発表場所 |
Toyama Japan |
| 発表日 |
2016/06/30
|
| 講演内容 |
Conductive AlN layer grown on a Si substrate using MOCVD has been realized by the spontaneously formed nano-size via-holes. The layer has been applied for the preparation of vertical AlGaN FETs. |
