| 掲載年度 |
2016 |
| 種類 |
国外
|
| 学会名 |
The 9th International Conference on Quantum Dots (QD2016) |
| 発表題目 |
In situ XRD observation of strain in InAs quantum dots and InGaAs capping layers during MBE growth on GaAs(001) |
| 発表者 |
Itaru Kamiya
Kenichi Shimomura
Hidetoshi Suzuki（宮崎大学）
Takuo Sasaki（量子科学技術研究開発機構）
Masamitu Takahasi（量子科学技術研究開発機構）
Yoshio Ohshita
|
| 主催団体 |
|
| 発表場所 |
Ramada Plaza Jeju Hotel, Jeju, Korea |
| 発表日 |
2016/05/23
|
| 講演内容 |
In situ measurements on the growth of InAs quantum dots (QDs) and cap layers during molecular beam epitaxy (MBE) are performed using a combined MBE - X-ray diffraction (XRD) system at SPring-8. The evolution of strain induced both in the QDs and cap layers during capping is followed by XRD intensity transients. From the XRD intensities that arise from different lattice constants, we compare the evolution of the strain induced in the QDs and cap layers. Prominent differences are observed between those obtained during InGaAs and GaAs capping, and also when modulated cap structures are grown. |
