| 講演内容 |
The submonolayer (SML) growth mode has been attracting attention as an alternative to the well-known Stranski-Krastanov (SK) growth mode as a method of assembling InAs nanostructures, e.g. quantum dots (QDs), on GaAs by MBE. While the 2D to 3D transition in SK-growth has been well investigated with a critical thickness of ~1.7 ML, different conditions are employed for SML-growth. Here, atomic force microscopy (AFM) is utilized to study the topographical changes at the 2D to 3D transition in InAs SML nanostructures. |
