| 掲載年度 |
2019 |
| 種類 |
国内
|
| 学会名 |
International Conference on Solid State Devices and Materials |
| 発表題目 |
Pregrowth Treatment Induced below-bandgap states in GaAs |
| 発表者 |
Ronel Christian Intal Roca
Itaru Kamiya
|
| 主催団体 |
AIP |
| 発表場所 |
Nagoya University, Nagoya, Japan |
| 発表日 |
2019/09/05
|
| 講演内容 |
Below-bandgap states induced by pre-epitaxial growth treatments in GaAs have been investigated by photoluminescence (PL). Various electronic states giving rise to near-infrared (NIR) PL peaks are generated through processes such as annealing or buffer growth that are standard for epitaxial growth of InAlGaAs structures on (001) GaAs substrates. These states often overlap with those from InGaAs structures, not only complicating the interpretation by also altering the electronic properties of the devices. The present work provides guides for distinguishing the desired electronic states from the pregrowth treatment-induced defect states. |
