| 掲載年度 |
2019 |
| 種類 |
国内
|
| 学会名 |
Compound Semiconductor Week 2019 |
| 発表題目 |
Below-bandgap photoluminescence from GaAs |
| 発表者 |
Ronel Christian Intal Roca
Itaru Kamiya
|
| 主催団体 |
IEEE |
| 発表場所 |
Kusagano International Forum, Nara, Japan |
| 発表日 |
2019/05/20
|
| 講演内容 |
Below-bandgap photoluminescence (PL) from GaAs has been investigated. We find that various electronic states giving rise to near-infrared (NIR) PL peaks can be generated through processes that are standard for epitaxial growth of InAlGaAs structures on (001) GaAs substrates. The PL signals from these states overlap with those from InAs quantum dots, wetting layers, and InGaAs structures, complicating the design of devices for telecommunications or intermediate band solar cells. The present result provides guides for distinguishing the desired electronic states from the thermal treatment-induced defect states. |
