学会発表

電子デバイス
教授 岩田直高

掲載年度 2014
種類 国内
学会名 The 2014 International Conference on Solid State Devices and Materials
発表題目 Novel vertical AlGaN deep ultra violet photo-detector on n+Si substrate using spontaneous via holes growth technique
発表者 Kota Ozeki (Ritsumeikan University)
Noriko Kurose(Ritsumeikan University)
Naotaka Iwata
Kentaro Shibano(Ritsumeikan University)
Tsutomu Araki(Ritsumeikan University)
Itaru Kamiya
Yoshinobu Aoyagi(Ritsumeikan University)
主催団体 THE JAPAN SOCIETY OF APPLIED PHYSICS
発表場所 Tsukuba International Congress Center
発表日 2014/09/11
講演内容 Vertical AlGaN deep ultra violet (DUV) photo-detector has been successfully fabricated on n+Si substrate using spontaneous via holes growth technique. The spontaneous via holes make the insulating AlN buffer layer to be conductive, which is indispensable to grow AlGaN epitaxial layer, and makes possible the direct current flow from p electrode to n+Si substrate without any trench etching to form n-contact. This vertical device is easily enlarged to realize large area solar-blind photo-detector which is necessary for many applications for sensing contamination of water, biological material and so on under the sunshine.