学会発表

電子デバイス
教授 岩田直高

掲載年度 2018
種類 国外
学会名 International Workshop on Nitride Semiconductors 2018
発表題目 Effect of inductively coupled plasma reactive ion etching on performances of p-GaN gate AlGaN/GaN HEMTs
発表者 Yoshihiko Akazawa
Takaaki Kondo
Naotaka Iwata
主催団体 "Materials Science and Advanced Electronics Created by Singularity", MEXT-KAKENHI on Innovative Areas, FY2016-2020 and The Japanese Association for Crystal Growth
発表場所 Kanazawa, Japan
発表日 2018/11/12
講演内容 Effect of inductively coupled plasma reactive ion etching on performances of p-GaN gate AlGaN/GaN HEMTs