主な研究論文 |
・T. Kamioka, Y. Hayashi, Y. Isogai, K. Nakamura, and Y. Ohshita, “Analysis of interface workfunction and process-induced damage of reactive-plasma deposited ITO/SiO2/Si stack”,AIP Advanced Vol. 7, pp. 095212(2017)
・Y. Ohshita, T. Kamioka, and K. Nakamura, “Technology trend of High Efficiency Crystalline Silicon Solar Cells”,AAPPS Vol. 27, No. 3, pp. 2(2017)
・Y. Ohshita, K. Ikeda, H. Suzuki, H. Machida, H. Sudoh, T. Tanaka, T. Honda, M. Inagaki, and M. Yamaguchi, “N-H related defects in GaAsN grown through chemical beam epitaxy”,Jpn. J. Appl. Phys. Vol. 53, pp. 031001(2014)
・Y. Hayashi, D. Li, A. Ogura and Y. Ohshita, “Role of i-aSi: H layers in aSi:H/cSi Heterojunction Solar Cells”, IEEE J. of Photovoltaics Vol. 3, No. 4, pp. 1149(2013)
・T. Sasaki, H. Suzuki, M. Takahashi, Y. Ohshita, I. Kamiya, and M. Yamaguchi, “X-ray reciprocal space mapping of dislocation-mediated strain relaxation during InGaAs(001) epitaxial growth”,J. Appl. Phys. Vol. 110,
pp. 113502(2011) |