| 主な研究論文 |
・N. Iwata, Y. Matsumoto, T. Baba, and M. Ogawa,“DX center-like trap in selectively Si-doped AlAs/GaAs superlattice,”Jpn. J. Appl. Phys. Vol.25, No.5, pp.L349-L352（1986.04.26）
・N. Iwata, K. Yamaguchi, T. B. Nishimura, K. Takemura, M. Kuzuhara, and Y. Miyasaka, “Li-ion battery operated power amplifier MMICs utilizing SrTiO3 capacitors and heterojunction FETs for PDC and CDMA cellular phones,”Solid-State Electron. Vol.43, No.4, pp.747-753（1999.04）
・N. Kurose, N. Iwata, I. Kamiya, and Y. Aoyagi,“Formation of conductive spontaneous via holes in AlN buffer layer on n+Si substrate by filing the vias with n-AlGaN by metal organic chemical vapor deposition and application to vertical deep ultraviolet photo-sensor,”AIP Advances Vol.4, pp.123007-1-123007-7（2014.12.23）
・N. Kurose, K. Matsumoto, F. Yamada, T. M. Roffi, I. Kamiya, N. Iwata, and Y. Aoyagi, “Laser-induced local activation of Mg-doped GaN with a high lateral resolution forhigh power vertical devices,”AIP Advances Vol.8, pp.15329-1-15329-5（2018.1.31）
・T. Kondo, Y. Akazawa, and N. Iwata, "Effects of p-GaN gate structures and fabrication process on performances of normally-off AlGaN/GaN high electron mobility transistors," Jpn. J. Appl. Phys.Vol.59, SAAD02-1-4（2019.11.21） |
