| 主な研究論文 |
・Nobuaki Kojima, Yu-Cian Wang, Kei Kawakatsu, Akio Yamamoto, Yoshio ohshita, Masafumi Yamaguchi, "Epitaxial GaAs Lift Off via III-VI Layered Compounds", Proc. 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC), pp.1015-1017 (2020.02.06)
・Omar Elleuchi, Li Wang, Kan Hua Lee, Kazuma Ikeda, Nobuaki Kojima, Yoshio Ohshita, Masafumi Yamaguchi,“Identification of N‒H related acceptor defects in GaAsN grown by chemical beam epitaxy using hydrogen isotopes”，Journal of Alloys and Compounds Vol. 649, pp. 815-818（2015.07.23）
・Crisoforo Morales, Nobuaki Kojima, Seiji Nishi, Masafumi Yamaguchi, “Structural and Molecular Changes of C60 Thin Films with Incorporated Magnesium Atoms”，Japanese Journal of Applied Physics Vol. 51, No. ４, pp. 04 DK08（2012.04.20）
・Makoto Inagaki, Hidetoshi Suzuki, Kazumasa Mutaguchi, Atsuhiko Fukuyama, Nobuaki Kojima, Yoshio Ohshita, Masafumi Yamaguchi, “Shallow Carrier Trap Levels in GaAsN Investigated by Photoluminescence”，Japanese Journal of Applied Physics Vol. 50, No. ４, pp. 04 DP14（2011.04.20）
・Hidetoshi Suzuki, Makoto Inagaki, Takahiko Honda, Yoshio Ohshita, Nobuaki Kojima, Masafumi Yamaguchi, “Improvements in Optoelectrical Properties of GaAsN by Controlling Step Density during Chemical Beam Epitaxy Growth”，Japanese Journal of Applied Physics Vol. 49, No. ４, pp. 04 DP08（2010.04） |
